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SUPSiC MOSFET 碳化硅场效应管 类型：N沟道 漏源极击穿电压(Vdss):1200V 连续漏极电流(Id):17A 漏源导通电阻(RDS on)：160mΩ 栅极电荷(Qg):38nC 功率(Pd):97W
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