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SUPSiC MOSFET 碳化硅场效应管 类型：N沟道 漏源极击穿电压(Vdss):650V 连续漏极电流(Id):120A 漏源导通电阻(RDS on)：15mΩ 栅极电荷(Qg):188nC 功率(Pd):416W
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